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Page 22: Samsung Memorys
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Samsung M312L3310ETS-CB0Q0-R 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M471B5773CH5-CKO 2GB 1600MHz 1Rx8 204 Pin Non-ECC DDR3 Memory
- Brand: Samsung
- Capacity: 2GB
- Memory Speed: 1600MHz
- Data Integrity Check: Non-ECC
- Rank: 1Rx8
- Latency Timing: CL11
- Pins: 204 Pin
- Memory Technology: DDR3
- Buffered/Registered: Non
- Memory Form Factor: SODIMM
Samsung M395T5166AZ4-CE6D1 4GB 667MHz 2Rx4 240 Pin ECC DDR2 Memory
- Brand: Samsung
- Capacity: 4GB
- Memory Speed: 667MHz
- Data Integrity Check: ECC
- Rank: 2Rx4
- Latency Timing: CL5
- Pins: 240 Pin
- Memory Technology: DDR2
- Memory Form Factor: DIMM
Samsung M383L5628BT1 2GB 200MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 2GB
- Memory Speed: 200MHz
- Data Integrity Check: ECC
- Latency Timing: CL2
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M470T2864DZ3-CE6-IX2 1GB 667MHz Non-ECC DDR2 Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 667MHz
- Data Integrity Check: Non-ECC
- Memory Technology: DDR2
- Memory Form Factor: SODIMM
Samsung M312L6420FTS-CB0 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: RDIMM
Samsung M312L3310ETSCA2 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L3313BT0-LA0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L3313BT1-LB0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L3313BT1-LA0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L1714DT1-CB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M383L3310ETS-CA2 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L3313BT0-LB0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L1714BT0-CB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L2828CT0-LA2 1GB 266MHz ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Latency Timing: CL2.5
- Memory Technology: DDR
- Memory Form Factor: RDIMM
Samsung M383L6423CT1-LA2 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L3313BT1-LB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L3223CT1-LA2 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L3313BT0-CA2 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L3313ETS-LB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L6420BT1-CA2 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M381L1713CTL-CA2 128MB 266MHz 184 Pin ECC DDR2 Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR2
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L1624BT1-LB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M381L3313BT1-LB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L6420CT0-CA2 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM