Samsung M378A1K43DB2-CTD 8GB 2666MHz DIMM-2666MHz 2Rx ECC Unbuffered Image

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Samsung M378A1K43DB2-CTD 8GB 2666MHz DIMM-2666MHz 2Rx ECC Unbuffered

  • Part Number : M378A1K43DB2-CTD
  • Brand : Samsung

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Samsung M378A1K43DB2-CTD Manufacturer
Manufacturer
Samsung
Samsung M378A1K43DB2-CTD Form Factor
Form Factor
UDIMM
Samsung M378A1K43DB2-CTD Capacity
Capacity
8GB
Samsung M378A1K43DB2-CTD Memory Speed
Memory Speed
2666 MHz
Samsung M378A1K43DB2-CTD Pins
Pins
288 Pin
Samsung M378A1K43DB2-CTD Interface
Interface
IDE

Full Samsung M378A1K43DB2-CTD Specifications

Brand Samsung
Form Factor UDIMM
Capacity 8GB
Memory Speed 2666 MHz
Data Integrity Check Non-ECC
Voltage 1.2v
Rank 1Rx8
Latency Timing CL19
Pins 288 Pin
Memory Technology DDR4
Buffered/Registered Non
Interface Type IDE

Samsung M378A1K43DB2-CTD Frequently Asked Questions

What does it mean if memory has a latency of CL19?

CL19 refers to the CAS Latency of a memory module. CAS (Column Address Strobe) Latency is a measure of the delay between the memory controller requesting data from the memory module and the data being available for use. It is often expressed as a number, such as CL19, CL16, etc. The lower the CAS Latency number, the faster the memory can respond to requests, resulting in better performance.

A CL19 memory module implies that it takes 19 clock cycles for the memory to provide the requested data after being accessed by the memory controller. Lower CAS Latency numbers (such as CL16 or CL14) indicate faster performance, as the memory can deliver data more quickly.

Memory modules with CL19 are relatively slower compared to those with lower CAS Latency values. CL19 memory is not necessarily a recent development; it has been around for a while as memory technology has evolved. The concept of CAS Latency and its various values have been present since DDR (Double Data Rate) SDRAM (Synchronous Dynamic Random-Access Memory) became popular.

The importance of advancements in memory technology, including lower CAS Latency values like CL19, lies in improving overall system performance. Lower CAS Latency means that the memory can respond more quickly to the requests of the CPU or other components, reducing wait times and enhancing the overall speed of data transfer. This is particularly significant in applications that require high-speed data processing, such as gaming, content creation, scientific simulations, and server operations.

Faster memory can lead to improved system responsiveness, faster application loading times, and more efficient multitasking. However, it's essential to note that while lower CAS Latency values are desirable, they are just one aspect of memory performance. Other factors like memory capacity, memory speed, and the specific needs of the system also play a role in determining the overall performance gain.

Advancements in memory technology, including improvements in CAS Latency, contribute to making computing systems more powerful and efficient, ultimately enhancing the user experience across a wide range of applications.

What does it mean if memory is "Non-ECC"?

If memory is specified as "non-ECC," it means that it is a type of memory module that does not incorporate Error-Correcting Code (ECC) capabilities.

Non-ECC memory, also known as unbuffered or non-registered memory, lacks the additional error-checking and error-correction mechanisms found in ECC memory modules. This type of memory is more commonly used in consumer-grade systems, such as home computers, laptops, and gaming PCs.

Non-ECC memory operates without the extra parity or checksum bits present in ECC memory. As a result, it does not have the ability to detect or correct certain types of data errors that may occur during memory operations.

While non-ECC memory is more affordable and widely available, it is generally considered sufficient for most consumer computing needs where data integrity is not critical. Non-ECC memory still provides reliable data storage and retrieval, making it suitable for tasks such as general computing, web browsing, and gaming.

It's important to note that when using non-ECC memory, the overall system stability and data integrity may rely more heavily on other components, such as the reliability of the motherboard, power supply, and other error-checking mechanisms implemented at the software or system level.

What does it mean if memory has a form factor of UDIMM?

If memory has a form factor of UDIMM, it means that it is designed according to the Unbuffered Dual In-Line Memory Module standard. UDIMM is a type of memory module that does not incorporate a register (or buffer) between the memory controller and the memory chips.

UDIMM modules are simpler in design compared to RDIMM modules. They directly connect the memory chips to the memory controller without the intermediate register. UDIMMs are commonly used in consumer-grade computers and systems where large memory configurations are not required.

UDIMM memory modules were introduced in the late 1980s and early 1990s as a successor to the previous memory module form factors, such as SIMM (Single In-Line Memory Module). The specific manufacturer responsible for the release of UDIMM modules may vary, as multiple memory manufacturers adopted and produced UDIMMs.

UDIMMs offer simplicity and lower cost compared to buffered memory modules like RDIMMs. They are well-suited for personal computers, desktops, and other systems that do not have extensive memory expansion requirements. UDIMMs are commonly used in home computers, gaming systems, and small office setups.

However, it's important to note that UDIMMs have limitations in terms of memory capacity and the number of modules that can be used simultaneously. As they lack the register found in RDIMMs, UDIMMs may have restrictions on the maximum memory capacity per module and the overall memory capacity of a system.

UDIMMs continue to be widely used in consumer computing applications where cost-effectiveness and simplicity are prioritized. They provide a reliable and affordable memory solution for everyday computing needs without the need for extensive memory expansion capabilities.

What does it mean if memory has a speed of 2666MHz?

RAM speed is measured in megahertz (MHz) and refers to the number of cycles per second that the RAM can perform. In the context of "2666 MHz" RAM, it means that the RAM module is capable of performing 2,666 million cycles per second.

This measurement is often associated with DDR4 RAM, which is a type of Double Data Rate (DDR) RAM that was widely used in computers and servers. DDR4 RAM with a speed of 2666 MHz was released around 2014-2015. The release of DDR4 RAM marked an important advancement in technology for several reasons:

  1. Increased Data Transfer Rate: DDR4 RAM offered faster data transfer rates compared to its predecessor, DDR3. The higher MHz rating translated to improved performance in data-intensive tasks, as more data could be transferred between the RAM and the CPU in a shorter amount of time.

  2. Energy Efficiency: DDR4 RAM was designed to be more energy-efficient than DDR3. It operated at lower voltage levels, which helped reduce power consumption and heat generation. This was particularly important for laptops and servers where energy efficiency and heat management were crucial.

  3. Higher Capacity and Scalability: DDR4 RAM allowed for larger memory modules and higher capacities. This was important for applications that required a large amount of memory, such as virtualization, big data analysis, and content creation. Servers benefited from being able to accommodate more RAM for demanding workloads.

  4. Improved Bandwidth: The increased MHz rating of DDR4 RAM translated to improved memory bandwidth, which is the rate at which data can be read from or written to the RAM. This was important for tasks that involve rapid data manipulation, such as video editing and scientific simulations.

  5. Future-Proofing: DDR4 RAM's technological advancements provided a foundation for future upgrades and innovations in memory technology. This made DDR4-based systems more capable of handling evolving software and hardware demands.

Overall, the introduction of DDR4 RAM with higher speeds like 2666 MHz was important for improving overall system performance, energy efficiency, and the ability to handle more demanding tasks. As technology continued to advance, even faster RAM speeds and newer memory technologies have been developed, further pushing the boundaries of computing capabilities.

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