- free returns
- free shipping
- free support
- free Warranty
Page 2: Samsung CL2.5 Memory
Do you have questions about availablity?
Are you unsure if you have the correct part? Chat with a member of our sales or support team, we're happy to answer your questions and help you find the perfect part.
Search By Part Number To Find Compatible Samsung Memory
Samsung M383L3313DTS-LA0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L6423HUS-CA2 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M470L6524BT0CB306 512MB 333MHz 200 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 333MHz
- Data Integrity Check: Non-ECC
- Latency Timing: CL2.5
- Pins: 200 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: SODIMM
Samsung M312L3223HUS-CB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L3223EZ0-CB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung KR-M312L2923BG0-CB3-0525 1GB 333MHz 2Rx8 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 333MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Rank: 2Rx8
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M470L3224FU0-CB0 256MB 266MHz 200 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Latency Timing: CL2.5
- Pins: 200 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: SODIMM
Samsung M312L3310ETS-CB0QO 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung KR-M312L6420ETS-CB0 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L6523CZ0 512MB 333MHz 1Rx4 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 333MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Rank: 1Rx4
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L0914DT2-LCC 64MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 64MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L5628BT0CB0Q0 2GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 2GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L3310ETS-CB0Q0-R 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L6420FTS-CB0 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: RDIMM
Samsung M312L3310ETSCA2 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L3313BT0-LA0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L3313BT1-LB0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L3313BT1-LA0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L1714DT1-CB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M383L3310ETS-CA2 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L3313BT0-LB0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L1714BT0-CB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L2828CT0-LA2 1GB 266MHz ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Latency Timing: CL2.5
- Memory Technology: DDR
- Memory Form Factor: RDIMM
Samsung M383L6423CT1-LA2 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L3313BT1-LB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM