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Samsung M312L3310ETS-CB0QO 256MB 266MHz 184 Pin ECC DDR Memory
- Part Number : M312L3310ETS-CB0QO
- Brand : Samsung
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Full Samsung M312L3310ETS-CB0QO Specifications
| Brand | Samsung |
| Capacity | 256MB |
| Memory Speed | 266MHz |
| Data Integrity Check | ECC |
| Voltage | 2.5v |
| Latency Timing | CL2.5 |
| Pins | 184 Pin |
| Memory Technology | DDR |
| Memory Form Factor | DIMM |
Compare with similar items
| Capacity | 128MB | 256MB | 1GB | 1GB | 1GB |
|---|---|---|---|---|---|
| Memory Form Factor | DIMM | DIMM | DIMM | DIMM | DIMM |
| Memory Speed | 333MHz | 266MHz | 266MHz | 266MHz | 266MHz |
| Memory Technology | DDR | DDR | DDR | DDR | DDR |
| Data Integrity Check | Non-ECC | ECC | ECC | ECC | ECC |
| Buffered/Registered | Non | ||||
| Latency Timing | CL2.5 | CL2.5 | CL2.5 |
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