UCS-MKIT-164RX-C Cisco 32GB Kit PC3-10600 DDR3-1333MHz ECC Registered CL9 240-Pin DIMM Dual Rank 1.35V Low Voltage Memory Image

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UCS-MKIT-164RX-C Cisco 32GB Kit PC3-10600 DDR3-1333MHz ECC Registered CL9 240-Pin DIMM Dual Rank 1.35V Low Voltage Memory

  • Part Number : UCS-MKIT-164RX-C
  • Brand : CISCO

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CISCO UCS-MKIT-164RX-C Manufacturer
Manufacturer
Cisco
CISCO UCS-MKIT-164RX-C Form Factor
Form Factor
DIMM
CISCO UCS-MKIT-164RX-C Capacity
Capacity
16GB
CISCO UCS-MKIT-164RX-C Memory Speed
Memory Speed
1333 MHz
CISCO UCS-MKIT-164RX-C Pins
Pins
240 Pin
CISCO UCS-MKIT-164RX-C Interface
Interface
ATA

Full CISCO UCS-MKIT-164RX-C Specifications

Brand Cisco
Form Factor DIMM
Capacity 16GB
Memory Speed 1333 MHz
Data Integrity Check ECC
Voltage 1.35v
Rank 4Rx4
Latency Timing CL9
Pins 240 Pin
Memory Technology DDR3
Interface Type ATA

CISCO UCS-MKIT-164RX-C Frequently Asked Questions

What does it mean if memory is ECC?

ECC, which stands for Error-Correcting Code, refers to a type of memory module that incorporates advanced error-checking and error-correction capabilities. ECC memory goes beyond standard non-ECC memory by providing additional measures to ensure data integrity.

The primary purpose of ECC memory is to detect and correct certain types of data errors that may occur during the operation of a computer system. It achieves this by adding extra bits, known as parity or checksum bits, to each memory word stored in the module.

These extra bits enable the ECC mechanism to identify and automatically correct single-bit errors. If a single bit is flipped or corrupted, the ECC memory can detect the error and rectify it, preventing potential data corruption and maintaining accurate information storage.

ECC memory is particularly prevalent in critical computing systems, such as servers and workstations, as well as in environments where data integrity is paramount, such as scientific or financial applications. By providing an additional layer of error detection and correction, ECC memory significantly reduces the risk of undetected errors that could lead to system crashes, data corruption, or inaccurate calculations.

It's important to note that the utilization of ECC memory requires support from both the motherboard and the memory controller in the system. Not all systems or consumer-grade motherboards offer compatibility with ECC memory, so it's crucial to verify the specifications and requirements before incorporating ECC memory modules into a specific system.

What does it mean if memory runs at 1.35v?

If memory runs at 1.35V, it means that the memory module operates at a voltage of 1.35 volts. The voltage specification is a crucial factor in determining the power requirements and compatibility of the memory with the system.

Memory modules with a voltage rating of 1.35V are often referred to as Low Voltage (LV) or Low Voltage DDR3L (DDR3L being the DDR3 Low Voltage standard). These modules operate at a lower voltage compared to the standard DDR3 modules, which typically run at 1.5V. The reduced voltage helps in achieving lower power consumption and heat generation, making them more energy-efficient and suitable for systems that prioritize power savings.

The introduction of 1.35V memory modules, particularly the DDR3L standard, was driven by the need for more power-efficient computing solutions. It aimed to meet the increasing demand for reduced power consumption, longer battery life in mobile devices, and more environmentally friendly computing practices.

The release of 1.35V memory modules, including DDR3L, was the result of collaborative efforts by memory manufacturers, such as major industry players like Micron, Samsung, and Hynix. These manufacturers recognized the growing importance of energy efficiency and developed memory modules to align with industry trends and consumer demands.

1.35V memory modules gained prominence with the rising popularity of mobile computing devices, laptops, and small form factor systems where power efficiency and longer battery life were crucial considerations. They also found their use in low-power servers and other energy-conscious computing environments.

It's important to note that compatibility with the system's memory controller and motherboard is crucial when using 1.35V memory modules. The system's hardware should be designed to support and operate at the lower voltage to ensure proper functionality.

Overall, 1.35V memory modules represent a more power-efficient option, offering reduced power consumption and heat generation compared to standard voltage modules. The introduction of these modules was driven by the industry's focus on energy efficiency and the need for more environmentally conscious computing solutions.

What does it mean if memory has a chipset of 4Rx4?

When referring to server RAM, the term "4Rx4" pertains to the organization and configuration of the memory modules. Let's break it down further:


  • "4R" signifies that the memory module consists of four ranks. A rank represents a logical grouping of memory chips on the module, allowing for independent access and improved memory performance.

  • The "x4" indicates the arrangement of memory chips within each rank. Specifically, it signifies a 4-bit configuration, meaning that each chip can store 4 bits of data.


This particular memory configuration, featuring four ranks and a 4-bit organization within each rank, provides several important advancements in technology. It enables higher memory capacity, allowing for greater data storage, and enhances data transfer rates compared to previous configurations. This results in the simultaneous access of larger amounts of data and improved memory bandwidth.


The introduction of memory modules with the 4Rx4 configuration can be traced back to the mid-2000s. Since then, this technology has continued to evolve and find broader application.


The significance of the 4Rx4 configuration lies in its key benefits:


  1. Increased Memory Capacity: By incorporating four ranks, more memory chips can be accommodated on a single module, facilitating higher memory capacities. This is particularly crucial for server environments that handle resource-intensive workloads.

  2. Enhanced Performance: The 4Rx4 configuration improves memory performance through the utilization of multiple ranks and the resulting parallelism. This enables faster data access and transfer rates, minimizing bottlenecks and elevating overall system performance.

  3. Improved Fault Tolerance: With multiple ranks, memory modules become more resilient. In the event of a fault occurring in one rank, the remaining ranks continue to function, reducing the impact on system stability and reliability.


In summary, the 4Rx4 memory configuration represents a significant technological advancement in server RAM. It offers expanded memory capacities, improved performance, and increased fault tolerance, all of which are essential for demanding server applications and workloads.

What does it mean if memory is DDR3?

DDR3, which stands for Double Data Rate 3, is a type of computer memory technology utilized in servers, desktops, and laptops. It emerged as the third generation of DDR memory, succeeding its predecessor, DDR2. The advent of DDR3 marked a significant milestone in technological advancement for several reasons.


The release of DDR3 memory occurred in 2007, gradually superseding DDR2. Its introduction brought forth a range of improvements, rendering it a more efficient and faster memory technology. Here are the key aspects and advancements that made DDR3 a crucial development:


  1. Enhanced Data Transfer Rates: DDR3 achieved higher data transfer rates compared to DDR2. It introduced elevated clock speeds, facilitating swifter communication between the memory and the processor. DDR3 initially offered data rates starting from 800 MHz and scaled up to 2133 MHz and beyond, depending on the module's specifications.

  2. Amplified Bandwidth: DDR3 delivered increased bandwidth relative to DDR2. This was accomplished by implementing a higher prefetch length, allowing more data to be transferred in a single clock cycle. Consequently, data access became faster, resulting in improved overall system performance.

  3. Reduced Power Consumption: DDR3 was designed to operate at lower voltages than its predecessor. DDR3 memory modules typically functioned at 1.5 volts, whereas DDR2 modules operated at 1.8 volts. This voltage reduction led to lower power consumption, benefiting energy efficiency and aiding in heat management, especially in server environments.

  4. Expanded Memory Density: DDR3 facilitated higher memory densities in comparison to DDR2. This meant that more memory could be installed on a single module, enabling larger total memory capacities in servers. This advancement proved vital for memory-intensive applications and extensive virtualization environments.

  5. Enhanced Error Correction: DDR3 introduced improved error correction capabilities. DDR3 modules widely incorporated ECC (Error Correction Code) support, which played a crucial role in detecting and rectifying memory errors. This was particularly significant for server applications that demanded heightened data integrity and reliability.


Overall, DDR3 represented a significant leap in memory technology, offering faster data transfer rates, increased bandwidth, lower power consumption, expanded memory densities, and improved error correction capabilities. These advancements contributed to heightened system performance, scalability, and reliability, establishing DDR3 as a pivotal technology for server deployments and computing systems at large.

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