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Brand | Micron |
Form Factor | RDIMM |
Capacity | 32GB |
Memory Speed | 3200 MHz |
Data Integrity Check | ECC |
Voltage | 1.2v |
Rank | 2Rx4 |
Latency Timing | CL22 |
Pins | 288 Pin |
Memory Technology | DDR4 |
Interface Type | ATA |
ECC, which stands for Error-Correcting Code, refers to a type of memory module that incorporates advanced error-checking and error-correction capabilities. ECC memory goes beyond standard non-ECC memory by providing additional measures to ensure data integrity.
The primary purpose of ECC memory is to detect and correct certain types of data errors that may occur during the operation of a computer system. It achieves this by adding extra bits, known as parity or checksum bits, to each memory word stored in the module.
These extra bits enable the ECC mechanism to identify and automatically correct single-bit errors. If a single bit is flipped or corrupted, the ECC memory can detect the error and rectify it, preventing potential data corruption and maintaining accurate information storage.
ECC memory is particularly prevalent in critical computing systems, such as servers and workstations, as well as in environments where data integrity is paramount, such as scientific or financial applications. By providing an additional layer of error detection and correction, ECC memory significantly reduces the risk of undetected errors that could lead to system crashes, data corruption, or inaccurate calculations.
It's important to note that the utilization of ECC memory requires support from both the motherboard and the memory controller in the system. Not all systems or consumer-grade motherboards offer compatibility with ECC memory, so it's crucial to verify the specifications and requirements before incorporating ECC memory modules into a specific system.
CL22, in the context of server RAM or any type of computer memory, refers to the CAS latency (Column Address Strobe latency) of the memory module. CAS latency is a measure of how many clock cycles it takes for the memory module to respond to a read request after a column address is provided.
A CAS latency of CL22 means that it takes the memory module 22 clock cycles to respond to a read request. Lower CAS latency values indicate faster response times, which generally lead to better overall memory performance. However, it's important to note that CAS latency is just one of several factors that influence memory performance, and it doesn't tell the whole story on its own.
Memory modules with lower CAS latency values are generally considered to be more efficient because they can retrieve data from memory more quickly. The CL rating is often associated with DDR (Double Data Rate) RAM modules, such as DDR4 or DDR5.
In terms of when memory modules with CL22 were released, it's difficult to provide an exact date without specific context. Memory technology evolves over time, with each new generation offering improved performance and efficiency. For example, DDR4 memory, which is a common type of memory used in servers, was introduced around 2014. DDR5 memory, the successor to DDR4, began to appear in the market in the late 2020s.
Advancements in memory technology are important for several reasons:
In summary, CL22 refers to the CAS latency of a memory module, indicating how many clock cycles it takes to respond to a read request. Advancements in memory technology, such as lower CAS latency values, contribute to improved performance, energy efficiency, compatibility, and future-proofing for server and computer systems. The exact release date of memory with specific CAS latency values can vary depending on the generation and type of memory.
If memory runs at 1.2V, it means that the memory module operates at a voltage of 1.2 volts. The voltage specification is an important factor in determining the power requirements and compatibility of the memory with the system.
Memory modules running at 1.2V are commonly associated with DDR4 (Double Data Rate 4) memory technology. DDR4 was introduced as the successor to DDR3 and brought significant improvements in performance, energy efficiency, and data transfer rates.
The release of 1.2V memory modules, specifically DDR4 modules, was driven by major memory manufacturers, including Samsung, Micron, SK Hynix, and others. These manufacturers recognized the need for higher memory capacities, increased speed, and improved power efficiency to meet the evolving demands of computing systems.
The shift to 1.2V voltage in DDR4 modules was motivated by the industry's focus on energy efficiency and power savings. By operating at a lower voltage, DDR4 memory modules offered reduced power consumption and heat generation compared to their predecessors.
The lower voltage of 1.2V in DDR4 modules was chosen as a balance between performance and power efficiency. It allowed for improved data transfer rates and higher memory densities while minimizing power requirements and contributing to energy-conscious computing.
DDR4 memory modules running at 1.2V voltage became the standard for mainstream computer systems, including desktops, laptops, servers, and other computing platforms. They provided higher performance, increased memory capacities, and improved power efficiency compared to previous memory technologies.
It's important to note that compatibility with the system's memory controller and motherboard is essential when using 1.2V memory modules. The system's hardware should be designed to support and operate at this voltage to ensure proper functionality.
DDR4 memory, operating at 1.2V, revolutionized the memory landscape by offering improved efficiency and performance for a wide range of computing applications. Its introduction brought significant advancements to memory technology, catering to the growing demands of modern computing systems for faster, more power-efficient memory solutions.
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"i ask since the first contsct if the memories are new brand sealed and i receive the memories but dont have original sealed"
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All of our IT Hardware is tested through an extensive diagnostic process
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