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|Memory Speed||1066 MHz|
|Data Integrity Check||ECC|
ECC, which stands for Error-Correcting Code, refers to a type of memory module that incorporates advanced error-checking and error-correction capabilities. ECC memory goes beyond standard non-ECC memory by providing additional measures to ensure data integrity.
The primary purpose of ECC memory is to detect and correct certain types of data errors that may occur during the operation of a computer system. It achieves this by adding extra bits, known as parity or checksum bits, to each memory word stored in the module.
These extra bits enable the ECC mechanism to identify and automatically correct single-bit errors. If a single bit is flipped or corrupted, the ECC memory can detect the error and rectify it, preventing potential data corruption and maintaining accurate information storage.
ECC memory is particularly prevalent in critical computing systems, such as servers and workstations, as well as in environments where data integrity is paramount, such as scientific or financial applications. By providing an additional layer of error detection and correction, ECC memory significantly reduces the risk of undetected errors that could lead to system crashes, data corruption, or inaccurate calculations.
It's important to note that the utilization of ECC memory requires support from both the motherboard and the memory controller in the system. Not all systems or consumer-grade motherboards offer compatibility with ECC memory, so it's crucial to verify the specifications and requirements before incorporating ECC memory modules into a specific system.
If memory runs at 1.35V, it means that the memory module operates at a voltage of 1.35 volts. The voltage specification is a crucial factor in determining the power requirements and compatibility of the memory with the system.
Memory modules with a voltage rating of 1.35V are often referred to as Low Voltage (LV) or Low Voltage DDR3L (DDR3L being the DDR3 Low Voltage standard). These modules operate at a lower voltage compared to the standard DDR3 modules, which typically run at 1.5V. The reduced voltage helps in achieving lower power consumption and heat generation, making them more energy-efficient and suitable for systems that prioritize power savings.
The introduction of 1.35V memory modules, particularly the DDR3L standard, was driven by the need for more power-efficient computing solutions. It aimed to meet the increasing demand for reduced power consumption, longer battery life in mobile devices, and more environmentally friendly computing practices.
The release of 1.35V memory modules, including DDR3L, was the result of collaborative efforts by memory manufacturers, such as major industry players like Micron, Samsung, and Hynix. These manufacturers recognized the growing importance of energy efficiency and developed memory modules to align with industry trends and consumer demands.
1.35V memory modules gained prominence with the rising popularity of mobile computing devices, laptops, and small form factor systems where power efficiency and longer battery life were crucial considerations. They also found their use in low-power servers and other energy-conscious computing environments.
It's important to note that compatibility with the system's memory controller and motherboard is crucial when using 1.35V memory modules. The system's hardware should be designed to support and operate at the lower voltage to ensure proper functionality.
Overall, 1.35V memory modules represent a more power-efficient option, offering reduced power consumption and heat generation compared to standard voltage modules. The introduction of these modules was driven by the industry's focus on energy efficiency and the need for more environmentally conscious computing solutions.
DDR3, which stands for Double Data Rate 3, is a type of computer memory technology utilized in servers, desktops, and laptops. It emerged as the third generation of DDR memory, succeeding its predecessor, DDR2. The advent of DDR3 marked a significant milestone in technological advancement for several reasons.
The release of DDR3 memory occurred in 2007, gradually superseding DDR2. Its introduction brought forth a range of improvements, rendering it a more efficient and faster memory technology. Here are the key aspects and advancements that made DDR3 a crucial development:
Overall, DDR3 represented a significant leap in memory technology, offering faster data transfer rates, increased bandwidth, lower power consumption, expanded memory densities, and improved error correction capabilities. These advancements contributed to heightened system performance, scalability, and reliability, establishing DDR3 as a pivotal technology for server deployments and computing systems at large.
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