Samsung M474A2K43DB1-CWE 16GB 2Rx8 DDR4-3200 ECC Image

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Samsung M474A2K43DB1-CWE 16GB 2Rx8 DDR4-3200 ECC

  • Part Number : M474A2K43DB1-CWE
  • Brand : Samsung

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Samsung M474A2K43DB1-CWE Manufacturer
Samsung M474A2K43DB1-CWE Form Factor
Form Factor
Samsung M474A2K43DB1-CWE Capacity
Samsung M474A2K43DB1-CWE Memory Speed
Memory Speed
3200 MHz

Full Samsung M474A2K43DB1-CWE Specifications

Brand Samsung
Form Factor SODIMM
Capacity 16GB
Memory Speed 3200 MHz
Data Integrity Check ECC
Voltage 1.2v
Rank 2Rx8
Latency Timing CL22
Memory Technology DDR4
Buffered/Registered Non

Samsung M474A2K43DB1-CWE Frequently Asked Questions

What does it mean if memory is ECC?

ECC, which stands for Error-Correcting Code, refers to a type of memory module that incorporates advanced error-checking and error-correction capabilities. ECC memory goes beyond standard non-ECC memory by providing additional measures to ensure data integrity.

The primary purpose of ECC memory is to detect and correct certain types of data errors that may occur during the operation of a computer system. It achieves this by adding extra bits, known as parity or checksum bits, to each memory word stored in the module.

These extra bits enable the ECC mechanism to identify and automatically correct single-bit errors. If a single bit is flipped or corrupted, the ECC memory can detect the error and rectify it, preventing potential data corruption and maintaining accurate information storage.

ECC memory is particularly prevalent in critical computing systems, such as servers and workstations, as well as in environments where data integrity is paramount, such as scientific or financial applications. By providing an additional layer of error detection and correction, ECC memory significantly reduces the risk of undetected errors that could lead to system crashes, data corruption, or inaccurate calculations.

It's important to note that the utilization of ECC memory requires support from both the motherboard and the memory controller in the system. Not all systems or consumer-grade motherboards offer compatibility with ECC memory, so it's crucial to verify the specifications and requirements before incorporating ECC memory modules into a specific system.

What does it mean if memory has a latency of CL22?

CL22, in the context of server RAM or any type of computer memory, refers to the CAS latency (Column Address Strobe latency) of the memory module. CAS latency is a measure of how many clock cycles it takes for the memory module to respond to a read request after a column address is provided.

A CAS latency of CL22 means that it takes the memory module 22 clock cycles to respond to a read request. Lower CAS latency values indicate faster response times, which generally lead to better overall memory performance. However, it's important to note that CAS latency is just one of several factors that influence memory performance, and it doesn't tell the whole story on its own.

Memory modules with lower CAS latency values are generally considered to be more efficient because they can retrieve data from memory more quickly. The CL rating is often associated with DDR (Double Data Rate) RAM modules, such as DDR4 or DDR5.

In terms of when memory modules with CL22 were released, it's difficult to provide an exact date without specific context. Memory technology evolves over time, with each new generation offering improved performance and efficiency. For example, DDR4 memory, which is a common type of memory used in servers, was introduced around 2014. DDR5 memory, the successor to DDR4, began to appear in the market in the late 2020s.

Advancements in memory technology are important for several reasons:

  1. Performance: Lower CAS latency, higher data transfer rates, and increased memory capacities all contribute to improved overall system performance. Servers, in particular, benefit from faster and more efficient memory, as they handle heavy workloads and data-intensive tasks.

  2. Energy Efficiency: Newer memory technologies often come with improved energy efficiency, which is important for reducing power consumption and heat generation in data centers and servers. Energy efficiency is a crucial factor in modern computing, both for cost savings and environmental considerations.

  3. Compatibility: Advancements in memory technology can also lead to better compatibility with the latest processors and motherboards. This allows system builders to take advantage of the latest hardware innovations without worrying about compatibility issues.

  4. Future-Proofing: As software and applications become more demanding, having access to the latest memory technology ensures that a system can handle future workloads without becoming obsolete too quickly.

In summary, CL22 refers to the CAS latency of a memory module, indicating how many clock cycles it takes to respond to a read request. Advancements in memory technology, such as lower CAS latency values, contribute to improved performance, energy efficiency, compatibility, and future-proofing for server and computer systems. The exact release date of memory with specific CAS latency values can vary depending on the generation and type of memory.

What does it mean if memory has a form factor of SODIMM?

If memory has a form factor of SODIMM, it means that it is designed according to the Small Outline Dual In-Line Memory Module standard. SODIMM is a compact form factor primarily used in laptops, mini PCs, and other small form factor computing devices.

SODIMM modules are characterized by their smaller physical size compared to regular DIMM modules. They feature a dual in-line pin configuration similar to DIMM modules but with reduced dimensions. The smaller size of SODIMM modules allows them to fit into systems with space constraints while providing memory expansion capabilities.

SODIMM memory modules were introduced in the early 1990s as a variation of the DIMM standard. The exact release and specific manufacturer responsible for the introduction of SODIMM modules may vary. However, it is generally recognized that the standard was developed and adopted by major computer memory manufacturers to meet the demands of the emerging laptop and portable computing market.

SODIMM modules became popular due to their compatibility with smaller computing devices where space is limited, such as laptops and mini PCs. They offered a convenient and standardized memory form factor for these systems, allowing for easy installation and upgrading of memory.

Over the years, SODIMM modules have evolved to support various memory technologies, including SDRAM, DDR, DDR2, DDR3, DDR4, and DDR5, catering to the advancing requirements of portable computing devices.

Today, SODIMM modules continue to be widely used in laptops, mini PCs, compact desktops, and embedded systems. They provide the flexibility to increase memory capacity and enhance system performance in space-constrained environments, offering a practical solution for memory expansion in portable computing devices.

What does it mean if memory has a speed of 3200MHz?

In the context of server RAM (Random Access Memory), "3200 MHz" refers to the clock speed of the memory module. Clock speed, also known as frequency, is the number of cycles a RAM module can perform in a second. It is usually measured in megahertz (MHz) and indicates how quickly data can be read from or written to the memory.

The term "3200 MHz" indicates that the RAM module is capable of performing 3.2 billion cycles per second. This higher clock speed means that the memory can process data at a faster rate, which can lead to improved overall system performance, especially in tasks that involve a lot of data manipulation or multitasking.

Memory speeds like 3200 MHz started becoming more common around 2015-2016, although the technology and its development had been progressing for some time prior. Prior to this, memory speeds for servers and personal computers were typically lower, often in the range of 1333 MHz to 2400 MHz.

The move to higher memory speeds like 3200 MHz represented an important advancement in technology for a few reasons:

  1. Performance Improvement: The higher clock speeds allow data to be read from and written to memory more quickly, reducing the time it takes for the CPU to access data. This can lead to overall performance improvements, particularly in tasks that are memory-intensive.

  2. Data Throughput: Higher memory speeds can improve the overall data throughput of the system. This is particularly beneficial in scenarios where large amounts of data need to be transferred between the CPU and RAM, such as in scientific computing, data analytics, and high-performance computing.

  3. Multitasking and Virtualization: Servers often run multiple virtual machines or handle multiple tasks simultaneously. Higher memory speeds can improve the responsiveness and efficiency of these tasks by reducing memory-related bottlenecks.

  4. Future-Proofing: As software and applications become more demanding over time, having faster memory can help ensure that a server's performance remains adequate for new workloads and software updates.

  5. Compatibility: Advancements in technology often come with improvements in memory module design and compatibility. Higher-speed modules might also be more power-efficient, which is important for server environments where power consumption and heat dissipation are significant concerns.

It's important to note that the benefits of higher memory speeds are most noticeable in scenarios where the CPU is frequently accessing memory. In some workloads, the performance difference between various memory speeds might be minimal, depending on the specific tasks being performed.


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