Samsung M378A4G43MB1-CTD 32GB 2666MHz SDRAM-2666MHz Rx2 ECC Unbuffered Image

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Samsung M378A4G43MB1-CTD 32GB 2666MHz SDRAM-2666MHz Rx2 ECC Unbuffered

  • Part Number : M378A4G43MB1-CTD
  • Brand : Samsung

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Samsung M378A4G43MB1-CTD Manufacturer
Manufacturer
Samsung
Samsung M378A4G43MB1-CTD Form Factor
Form Factor
UDIMM
Samsung M378A4G43MB1-CTD Capacity
Capacity
32GB
Samsung M378A4G43MB1-CTD Memory Speed
Memory Speed
2666 MHz
Samsung M378A4G43MB1-CTD Pins
Pins
288 Pin
Samsung M378A4G43MB1-CTD Interface
Interface
IDE

Full Samsung M378A4G43MB1-CTD Specifications

Brand Samsung
Form Factor UDIMM
Capacity 32GB
Product Line EVO
Memory Speed 2666 MHz
Data Integrity Check Non-ECC
Voltage 1.2v
Rank 2Rx8
Latency Timing CL19
Pins 288 Pin
Memory Technology DDR4
Buffered/Registered Non
Interface Type IDE

Samsung M378A4G43MB1-CTD Frequently Asked Questions

What does it mean if memory is "Non-ECC"?

If memory is specified as "non-ECC," it means that it is a type of memory module that does not incorporate Error-Correcting Code (ECC) capabilities.

Non-ECC memory, also known as unbuffered or non-registered memory, lacks the additional error-checking and error-correction mechanisms found in ECC memory modules. This type of memory is more commonly used in consumer-grade systems, such as home computers, laptops, and gaming PCs.

Non-ECC memory operates without the extra parity or checksum bits present in ECC memory. As a result, it does not have the ability to detect or correct certain types of data errors that may occur during memory operations.

While non-ECC memory is more affordable and widely available, it is generally considered sufficient for most consumer computing needs where data integrity is not critical. Non-ECC memory still provides reliable data storage and retrieval, making it suitable for tasks such as general computing, web browsing, and gaming.

It's important to note that when using non-ECC memory, the overall system stability and data integrity may rely more heavily on other components, such as the reliability of the motherboard, power supply, and other error-checking mechanisms implemented at the software or system level.

What does it mean if memory has a form factor of UDIMM?

If memory has a form factor of UDIMM, it means that it is designed according to the Unbuffered Dual In-Line Memory Module standard. UDIMM is a type of memory module that does not incorporate a register (or buffer) between the memory controller and the memory chips.

UDIMM modules are simpler in design compared to RDIMM modules. They directly connect the memory chips to the memory controller without the intermediate register. UDIMMs are commonly used in consumer-grade computers and systems where large memory configurations are not required.

UDIMM memory modules were introduced in the late 1980s and early 1990s as a successor to the previous memory module form factors, such as SIMM (Single In-Line Memory Module). The specific manufacturer responsible for the release of UDIMM modules may vary, as multiple memory manufacturers adopted and produced UDIMMs.

UDIMMs offer simplicity and lower cost compared to buffered memory modules like RDIMMs. They are well-suited for personal computers, desktops, and other systems that do not have extensive memory expansion requirements. UDIMMs are commonly used in home computers, gaming systems, and small office setups.

However, it's important to note that UDIMMs have limitations in terms of memory capacity and the number of modules that can be used simultaneously. As they lack the register found in RDIMMs, UDIMMs may have restrictions on the maximum memory capacity per module and the overall memory capacity of a system.

UDIMMs continue to be widely used in consumer computing applications where cost-effectiveness and simplicity are prioritized. They provide a reliable and affordable memory solution for everyday computing needs without the need for extensive memory expansion capabilities.

What does it mean if memory has a speed of 2666MHz?

RAM speed is measured in megahertz (MHz) and refers to the number of cycles per second that the RAM can perform. In the context of "2666 MHz" RAM, it means that the RAM module is capable of performing 2,666 million cycles per second.

This measurement is often associated with DDR4 RAM, which is a type of Double Data Rate (DDR) RAM that was widely used in computers and servers. DDR4 RAM with a speed of 2666 MHz was released around 2014-2015. The release of DDR4 RAM marked an important advancement in technology for several reasons:

  1. Increased Data Transfer Rate: DDR4 RAM offered faster data transfer rates compared to its predecessor, DDR3. The higher MHz rating translated to improved performance in data-intensive tasks, as more data could be transferred between the RAM and the CPU in a shorter amount of time.

  2. Energy Efficiency: DDR4 RAM was designed to be more energy-efficient than DDR3. It operated at lower voltage levels, which helped reduce power consumption and heat generation. This was particularly important for laptops and servers where energy efficiency and heat management were crucial.

  3. Higher Capacity and Scalability: DDR4 RAM allowed for larger memory modules and higher capacities. This was important for applications that required a large amount of memory, such as virtualization, big data analysis, and content creation. Servers benefited from being able to accommodate more RAM for demanding workloads.

  4. Improved Bandwidth: The increased MHz rating of DDR4 RAM translated to improved memory bandwidth, which is the rate at which data can be read from or written to the RAM. This was important for tasks that involve rapid data manipulation, such as video editing and scientific simulations.

  5. Future-Proofing: DDR4 RAM's technological advancements provided a foundation for future upgrades and innovations in memory technology. This made DDR4-based systems more capable of handling evolving software and hardware demands.

Overall, the introduction of DDR4 RAM with higher speeds like 2666 MHz was important for improving overall system performance, energy efficiency, and the ability to handle more demanding tasks. As technology continued to advance, even faster RAM speeds and newer memory technologies have been developed, further pushing the boundaries of computing capabilities.

What does it mean if memory runs at 1.2v?

If memory runs at 1.2V, it means that the memory module operates at a voltage of 1.2 volts. The voltage specification is an important factor in determining the power requirements and compatibility of the memory with the system.

Memory modules running at 1.2V are commonly associated with DDR4 (Double Data Rate 4) memory technology. DDR4 was introduced as the successor to DDR3 and brought significant improvements in performance, energy efficiency, and data transfer rates.

The release of 1.2V memory modules, specifically DDR4 modules, was driven by major memory manufacturers, including Samsung, Micron, SK Hynix, and others. These manufacturers recognized the need for higher memory capacities, increased speed, and improved power efficiency to meet the evolving demands of computing systems.

The shift to 1.2V voltage in DDR4 modules was motivated by the industry's focus on energy efficiency and power savings. By operating at a lower voltage, DDR4 memory modules offered reduced power consumption and heat generation compared to their predecessors.

The lower voltage of 1.2V in DDR4 modules was chosen as a balance between performance and power efficiency. It allowed for improved data transfer rates and higher memory densities while minimizing power requirements and contributing to energy-conscious computing.

DDR4 memory modules running at 1.2V voltage became the standard for mainstream computer systems, including desktops, laptops, servers, and other computing platforms. They provided higher performance, increased memory capacities, and improved power efficiency compared to previous memory technologies.

It's important to note that compatibility with the system's memory controller and motherboard is essential when using 1.2V memory modules. The system's hardware should be designed to support and operate at this voltage to ensure proper functionality.

DDR4 memory, operating at 1.2V, revolutionized the memory landscape by offering improved efficiency and performance for a wide range of computing applications. Its introduction brought significant advancements to memory technology, catering to the growing demands of modern computing systems for faster, more power-efficient memory solutions.

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