Micron MD0512PC2100ERHY 512MB 266MHz DDR CL2.5 ECC
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Micron MD0512PC2100ERHY Product Specs
| Brand | Micron |
| Capacity | 512MB |
| Memory Speed | 266MHz |
| Data Integrity Check | ECC |
| Voltage | 2.5v |
| Latency Timing | CL2.5 |
| Pins | 184 Pin |
| Memory Technology | DDR |
| Memory Form Factor | DIMM |
Micron MD0512PC2100ERHY Description
The Micron MD0512PC2100ERHY 512MB 266MHz DDR CL2.5 ECC is a reliable memory module designed for servers and workstations requiring stable and error-free performance. This 512MB DDR DIMM operates at 266MHz with a CAS latency of 2.5, making it suitable for legacy systems and environments where data integrity is critical. Equipped with ECC (Error-Correcting Code), it helps detect and correct memory errors, ensuring system reliability and uptime. This module is compatible with systems that support 184-pin DDR ECC DIMMs running at 2.5 volts, commonly found in older server models and enterprise hardware.
Key specifications of the Micron MD0512PC2100ERHY memory module include its balanced capacity and speed, low voltage operation, and ECC support which is essential for mission-critical applications. Below is a detailed list of its features:
- Brand: Micron
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC (Error-Correcting Code)
- Voltage: 2.5V
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR (Double Data Rate)
- Memory Form Factor: DIMM
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Delivery Options
Overnight and Express Delivery in USA
Get within 1 to 3 days
Free Ground in USA
2 to 6 days (Varies by location)
$49 Ground Shipping To Canada
International Delivery Options Available
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Return & Warranty
30 days return
Warranty vary by product please see our Policies page
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We found 15 subs for the Micron MD0512PC2100ERHY
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Buffered/Registered: Non
- Memory Technology: DDR
- Capacity: 512MB
- Brand: Hynix
- Voltage: 2.5v
- Pins: 184 Pin
- ECC: ECC
- CAS Latency: CL2.5
- Memory Form Factor: DIMM
- Memory Speed: 266MHz
- Buffered/Registered: Non
Customer Reviews
Availability
New Condition: Chat For Price
Delivery Options
Overnight and Express Delivery in USA
Get within 1 to 3 days
Free Ground in USA
2 to 6 days (Varies by location)
$49 Ground Shipping To Canada
International Delivery Options Available
Contact Us For Detail
Payment Options
All Credit Cards Accepted + PayPal
PO Accepted from Qualified Businesses and Government Entities
Return & Warranty
30 days return
Warranty vary by product please see our Policies page