Samsung M474A1K43DB1-CWE 8GB 3200MHz 1Rx8 ECC DDR4 Memory
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Samsung M474A1K43DB1-CWE Product Specs
▲Samsung M474A1K43DB1-CWE Description
▼Introducing the Samsung M474A1K43DB1-CWE 8GB 3200MHz 1Rx8 ECC DDR4 Memory, a reliable and high-performance memory module designed to enhance your server's efficiency and stability. Ideal for use in compatible servers and workstations, this 8GB DDR4 SODIMM module supports ECC (Error-Correcting Code) technology, which helps detect and correct common types of data corruption, making it perfect for mission-critical applications where data integrity is paramount. Operating at a fast 3200MHz speed with a low voltage of 1.2V, it ensures smooth multitasking and improved system responsiveness.
This memory module is a 1Rx8 rank configuration with a CAS latency timing of CL22, balancing speed and reliability. Its non-buffered, non-registered design makes it suitable for systems that require SODIMM form factor memory, commonly found in compact servers and small form factor workstations.
Key specifications of the Samsung M474A1K43DB1-CWE memory module include:
- Brand: Sun
- Capacity: 8GB
- Memory Speed: 3200MHz
- Data Integrity Check: ECC (Error-Correcting Code)
- Voltage: 1.2V
- Rank: 1Rx8
- Latency Timing: CL22
- Memory Technology: DDR4
- Buffered/Registered: Non-buffered, Non-registered
- Memory Form Factor: SODIMM
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