Samsung M474A1G43DB0-CPB 8GB 2133MHz 2Rx8 ECC DDR4 Memory

Introducing the Samsung M474A1G43DB0-CPB 8GB 2133MHz 2Rx8 ECC DDR4 Memory, a reliable and high-performance memory module designed to enhance the efficiency and stability of your server systems. Ideal for use in compatible servers requiring ECC (Error-Correcting Code) memory, this module helps maintain data integrity by detecting and correcting common types of internal data corruption. It is perfect for business environments, data centers, and enterprise-grade applications where system reliability is paramount. This DDR4 SODIMM memory is widely compatible with servers and workstations that support 8GB 2133MHz DDR4 ECC RAM modules.

Key specifications of the Samsung M474A1G43DB0-CPB include its robust 8GB capacity and a fast 2133MHz memory speed, ensuring smooth multitasking and efficient data processing. The ECC feature is critical for error correction, making it suitable for mission-critical applications. Operating at a low voltage of 1.2V, it balances performance with energy efficiency. The module is configured as 2Rx8 rank with a CAS latency of CL15, which contributes to its responsive performance. Additionally, it is a non-buffered, unregistered SODIMM form factor, making it compatible with a wide range of server hardware.

• Brand: Sun
• Capacity: 8GB
• Memory Speed: 2133MHz
• Data Integrity Check: ECC
• Voltage: 1.2V
• Rank: 2Rx8
• Latency Timing: CL15
• Memory Technology: DDR4
• Buffered/Registered: Non-buffered
• Memory Form Factor: SODIMM

For your convenience, here is a related spare part that you might consider for replacement or upgrade purposes:

• Samsung M474A1G43EB1-CPB (Part Number: M474A1G43EB1-CPB)