Samsung M312L6420ETS-CB0 512MB 266MHz 2Rx4 184 Pin ECC DDR Memory

The Samsung M312L6420ETS-CB0 512MB 266MHz 2Rx4 184 Pin ECC DDR Memory is a reliable and efficient memory module designed for server environments requiring stable performance and data integrity. Ideal for use in Sun server systems, this 512MB DDR memory module operates at 266MHz, providing a balanced combination of speed and capacity suitable for various enterprise applications such as database management, virtualization, and transaction processing. Its ECC (Error-Correcting Code) capability ensures that data errors are detected and corrected on the fly, making it a perfect choice for mission-critical systems where reliability is paramount.

Key specifications of this memory module include:

• Brand: Sun
• Capacity: 512MB
• Memory Speed: 266MHz
• Data Integrity Check: ECC (Error-Correcting Code)
• Voltage: 2.5v, ensuring low power consumption and compatibility with Sun server architectures
• Latency Timing: CL2.5, providing efficient response times
• Pins: 184 Pin, standard for DDR RDIMM modules
• Memory Technology: DDR (Double Data Rate)
• Memory Form Factor: RDIMM (Registered DIMM), enhancing signal integrity and stability in multi-module configurations

For maintenance or upgrades, compatible spare parts include:

• Samsung M383L6423BT1-LB0 (Part Number: M383L6423BT1-LB0)