Samsung M312L6420ETS-CA2 512MB 266MHz 184 Pin ECC DDR Memory
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Samsung M312L6420ETS-CA2 Product Specs
▲Samsung M312L6420ETS-CA2 Description
▼Introducing the Samsung M312L6420ETS-CA2 512MB 266MHz 184 Pin ECC DDR Memory, a reliable and efficient memory module designed to enhance the performance of your server systems. This 512MB DDR memory module operates at 266MHz and features ECC (Error-Correcting Code) technology, ensuring data integrity and reducing the risk of memory errors, which is crucial for mission-critical applications. Ideal for use in Sun server environments, this RDIMM module is compatible with systems requiring 184-pin DDR memory, making it a perfect upgrade or replacement part for maintaining optimal server performance.
Key specifications of this memory module include its moderate capacity and speed, combined with advanced error-checking capabilities. The low voltage of 2.5V helps reduce power consumption, while the CL2 latency timing ensures responsive data access. Its 184-pin form factor fits seamlessly into compatible server motherboards, providing a stable and efficient memory solution.
- Brand: Sun
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC (Error-Correcting Code)
- Voltage: 2.5V
- Latency Timing: CL2
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: RDIMM
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