Samsung M312L5628BT0-CB0 2GB 266MHz 2Rx4 184 Pin ECC DDR Memory

Introducing the Samsung M312L5628BT0-CB0 2GB 266MHz 2Rx4 184 Pin ECC DDR Memory, a reliable and efficient memory module designed to enhance the performance of your server systems. This DDR DIMM is ideal for use in Sun server models, providing stable and error-checked memory operations thanks to its ECC (Error-Correcting Code) technology. Whether you are upgrading your existing server or building a new system, this 2GB memory module ensures smooth multitasking and improved data integrity, making it suitable for enterprise environments where reliability is critical.

Key specifications of the Samsung M312L5628BT0-CB0 memory module include its moderate 266MHz speed, which balances performance and power consumption. The module operates at a low voltage of 2.5V, helping to reduce heat generation and energy costs. Its 2Rx4 rank configuration and 184-pin DDR form factor ensure compatibility with a range of Sun servers. Additionally, the CAS latency timing of CL2.5 supports efficient data access speeds, contributing to overall system responsiveness.

• Brand: Sun
• Capacity: 2GB
• Memory Speed: 266MHz
• Data Integrity Check: ECC
• Voltage: 2.5V
• Rank: 2Rx4
• Latency Timing: CL2.5
• Pins: 184 Pin
• Memory Technology: DDR
• Memory Form Factor: DIMM