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Page 2: Samsung DDR Memory
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Search By Part Number To Find Compatible Samsung Memory
Samsung M383L3313DTS-LA0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L6423HUS-CA2 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M470L6524BT0CB306 512MB 333MHz 200 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 333MHz
- Data Integrity Check: Non-ECC
- Latency Timing: CL2.5
- Pins: 200 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: SODIMM
Samsung M312L3223HUS-CB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L3223EZ0-CB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung KR-M312L2923BG0-CB3-0525 1GB 333MHz 2Rx8 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 333MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Rank: 2Rx8
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M470L3224FU0-CB0 256MB 266MHz 200 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Latency Timing: CL2.5
- Pins: 200 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: SODIMM
Samsung M312L3310ETS-CB0QO 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung KR-M368L6523CUS-CCC-0550 512MB 400MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 400MHz
- Data Integrity Check: Non-ECC
- Latency Timing: CL3
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung KR-M312L6420ETS-CB0 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M470L6423ENOCB0 512MB 266MHz Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Memory Technology: DDR
- Memory Form Factor: SODIMM
Samsung M312L6523CZ0 512MB 333MHz 1Rx4 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 333MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Rank: 1Rx4
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L0914DT2-LCC 64MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 64MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L5628BT0CB0Q0 2GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 2GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L1713CTL-CB300 128MB 333MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 333MHz
- Data Integrity Check: Non-ECC
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L3310ETS-CB0Q0-R 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L5628BT1 2GB 200MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 2GB
- Memory Speed: 200MHz
- Data Integrity Check: ECC
- Latency Timing: CL2
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L6420FTS-CB0 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: RDIMM
Samsung M312L3310ETSCA2 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L3313BT0-LA0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L3313BT1-LB0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L3313BT1-LA0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L1714DT1-CB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M383L3310ETS-CA2 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L3313BT0-LB0 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM