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Page 2: Samsung 266MHz Memory
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Samsung M312L2920BTS-CB0-IX2 1GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L2920BTS-CBO-IX2 1GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L2828ETO-CBO-IX1 1GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M470L3224FT0CB006 256MB 266MHz 200 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Latency Timing: CL2.5
- Pins: 200 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: SODIMM
Samsung M368L1624DTL-CB000 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L2920BG0266CL2 1GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L2828EU0-CB0 1GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L1624ADTL 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L2920FLSCB000 1GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 1GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M383L6420ETS 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L6420FTS-CB0 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: RDIMM
Samsung M312L5628CUO-CA2 2GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 2GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L5128MT0-266 4GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 4GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M470L6524EN0-CB0 512MB 266MHz 200 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Pins: 200 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: SODIMM
Samsung M312L3310FTS 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L5628MT0-CB0QO 2GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 2GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L5628BTO 2GB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 2GB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L6420DT0-C8000 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L3223CT1-CB000 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M368L3223DTL-CB000 256MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M312L6423CT0-CA2 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M312L6420DT0-LB0 512MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 512MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Memory Form Factor: DIMM
Samsung M368L1713BT1-LB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
- Brand: Samsung
- Capacity: 128MB
- Memory Speed: 266MHz
- Data Integrity Check: Non-ECC
- Voltage: 2.5v
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M381L3223BT1-CB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM
Samsung M381L3223BT1-LB0 256MB 266MHz 184 Pin ECC DDR Memory
- Brand: Samsung
- Capacity: 256MB
- Memory Speed: 266MHz
- Data Integrity Check: ECC
- Latency Timing: CL2.5
- Pins: 184 Pin
- Memory Technology: DDR
- Buffered/Registered: Non
- Memory Form Factor: DIMM