FREE DELIVERY ANYWHERE IN THE USA!
We accept PO’s from Qualified Businesses, Government Agencies, Defense, and Educational Institutions.
We accept PO’s from Qualified Businesses, Government Agencies, Defense, and Educational Institutions.
  • free returns
  • free shipping
  • free support
  • free Warranty
show filter

Page 3: Samsung 266MHz Memory

Do you have questions about availablity?

Are you unsure if you have the correct part? Chat with a member of our sales or support team, we're happy to answer your questions and help you find the perfect part.

Search By Part Number To Find Compatible Samsung Memory

Samsung M312L2920BTS-CA0 1GB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 1GB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M383L6423BT1-LB0 512MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 512MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: RDIMM
Samsung M383L3223AT0-LA2 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Form Factor: DIMM
Samsung M312L6420DG0-CB0 512MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 512MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M312L2920BG0-CA2 1GB 266MHz ECC DDR Memory
  • Brand: Sun
  • Capacity: 1GB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: RDIMM
Samsung M312L6420EG0-CB0 512MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 512MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Form Factor: RDIMM
Samsung M312L6420DT0-LB0 512MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 512MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M312L3310CT0-CA0 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Rank: 1Rx4
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M312L2923BTS-CA2 1GB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 1GB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: RDIMM
Samsung M312L3223ETS-CA2 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: RDIMM
Samsung M328L2828DT0-CB0M1 1GB 266MHz DDR CL2.5 ECC
  • Brand: Samsung
  • Capacity: 1GB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Latency Timing: CL2.5
  • Pins: 208 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M312L3223EZ0-CB0 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Rank: 1Rx8
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M368L3313BT1-LB0 256MB DDR-266 PC2100 Non-ECC 184 Pin DIMM Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: Non-ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Buffered/Registered: Non
  • Memory Form Factor: DIMM
Samsung M383L3313BT0-LA0 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: RDIMM
Samsung M312L3310ETSCA2 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M312L5628BT0CB0Q0 2GB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 2GB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Memory Technology: DDR
Samsung M368L0914DT2-LCC 64MB 266MHz 184 Pin Non-ECC DDR Memory
  • Brand: Sun
  • Capacity: 64MB
  • Memory Speed: 266MHz
  • Data Integrity Check: Non-ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Buffered/Registered: Non
  • Memory Form Factor: DIMM
Samsung M470L6423ENOCB0 512MB 266MHz Non-ECC DDR Memory
  • Brand: Sun
  • Capacity: 512MB
  • Memory Speed: 266MHz
  • Data Integrity Check: Non-ECC
  • Memory Technology: DDR
  • Memory Form Factor: SODIMM
Samsung KR-M312L6420ETS-CB0 512MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 512MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M312L3310ETS-CB0QO 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M470L3224FU0-CB0 256MB DDR-266 PC2100 200 Pin SODIMM Non-ECC Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: Non-ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 200 Pin
  • Memory Technology: DDR
  • Buffered/Registered: Non
  • Memory Form Factor: SODIMM
Samsung M312L5628MT0-CB0Q0 2GB 2Rx4 266MHz DDR CL2.5 ECC
  • Brand: Samsung
  • Capacity: 2GB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Rank: 2Rx4
  • Latency Timing: CL3
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M312L3223HUS-CB0 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Technology: DDR
  • Memory Form Factor: DIMM
Samsung M312L6423HUS-CA2 512MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 512MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Form Factor: DIMM
Samsung M383L3313DTS-LA0 256MB 266MHz 184 Pin ECC DDR Memory
  • Brand: Sun
  • Capacity: 256MB
  • Memory Speed: 266MHz
  • Data Integrity Check: ECC
  • Voltage: 2.5v
  • Latency Timing: CL2.5
  • Pins: 184 Pin
  • Memory Form Factor: RDIMM