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Page 2: Samsung 266MHz Memory
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Search By Part Number To Find Compatible Samsung Memory

Samsung M383L3313DTS-LA0 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Form Factor: RDIMM

Samsung M312L6423HUS-CA2 512MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 512MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Form Factor: DIMM

Samsung M312L3223HUS-CB0 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: DIMM

Samsung M312L3223EZ0-CB0 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Rank: 1Rx8
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: DIMM

Samsung M470L3224FU0-CB0 256MB 266MHz 200 Pin Non-ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 200 Pin
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Memory Technology: DDR
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Buffered/Registered: Non
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Memory Form Factor: SODIMM

Samsung M312L3310ETS-CB0QO 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: DIMM

Samsung KR-M312L6420ETS-CB0 512MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 512MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: DIMM

Samsung M470L6423ENOCB0 512MB 266MHz Non-ECC DDR Memory
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Brand: Sun
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Capacity: 512MB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Memory Technology: DDR
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Memory Form Factor: SODIMM

Samsung M368L0914DT2-LCC 64MB 266MHz 184 Pin Non-ECC DDR Memory
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Brand: Sun
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Capacity: 64MB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Buffered/Registered: Non
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Memory Form Factor: DIMM

Samsung M312L5628BT0CB0Q0 2GB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 2GB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Memory Technology: DDR

Samsung M312L3310ETS-CB0Q0-R 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: DIMM

Micron MT1GU16D648-21-SP12 1GB 266MHz Non-ECC DDR Memory
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Brand: Sun
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Capacity: 1GB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Memory Technology: DDR

Samsung M312L3310ETSCA2 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: DIMM

Samsung M383L3313BT0-LA0 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: RDIMM

Samsung M368L3313BT1-LB0 256MB 266MHz 184 Pin Non-ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Buffered/Registered: Non
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Memory Form Factor: DIMM

Samsung M368L3313BT1-LA0 256MB 266MHz 184 Pin Non-ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Buffered/Registered: Non
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Memory Form Factor: DIMM

Samsung M368L1714DT1-CB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
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Brand: Sun
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Capacity: 128MB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Buffered/Registered: Non
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Memory Form Factor: DIMM

Samsung M383L3310ETS-CA2 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Rank: 1Rx4
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: DIMM

Samsung M368L3313BT0-LB0 256MB 266MHz 184 Pin Non-ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Buffered/Registered: Non
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Memory Form Factor: DIMM

Samsung M368L1714BT0-CB0 128MB 266MHz 184 Pin Non-ECC DDR Memory
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Brand: Sun
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Capacity: 128MB
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Memory Speed: 266MHz
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Data Integrity Check: Non-ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Buffered/Registered: Non
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Memory Form Factor: DIMM

Samsung M383L6423CT1-LA2 512MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 512MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Rank: 2Rx8
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: RDIMM

Samsung M383L3313BT1-LB0 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
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Latency Timing: CL2.5
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Pins: 184 Pin
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Memory Technology: DDR
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Memory Form Factor: RDIMM

Samsung M383L3223CT1-LA2 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
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Voltage: 2.5v
-
Latency Timing: CL2.5
-
Pins: 184 Pin
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Memory Form Factor: DIMM

Samsung M383L3313BT0-CA2 256MB 266MHz 184 Pin ECC DDR Memory
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Brand: Sun
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Capacity: 256MB
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Memory Speed: 266MHz
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Data Integrity Check: ECC
-
Voltage: 2.5v
-
Latency Timing: CL2.5
-
Pins: 184 Pin
-
Memory Form Factor: DIMM

Samsung M312L3313ETS-LB0 256MB 266MHz 184 Pin ECC DDR Memory
-
Brand: Sun
-
Capacity: 256MB
-
Memory Speed: 266MHz
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Data Integrity Check: ECC
-
Voltage: 2.5v
-
Latency Timing: CL2.5
-
Pins: 184 Pin
-
Memory Form Factor: DIMM