Page 2: Samsung CL11 Memory

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Samsung M471B5273DH0-CK0X2 4GB 1600MHz 2Rx8 Non-ECC DDR3 Memory

Brand: Sun
Capacity: 4GB
Memory Speed: 1600MHz
Data Integrity Check: Non-ECC
Rank: 2Rx8
Latency Timing: CL11
Pins: 204 Pin
Memory Technology: DDR3
Buffered/Registered: Non
Memory Form Factor: SODIMM

Samsung M378B5173DH0-CK0 4GB 1600MHz 1Rx8 240 Pin Non-ECC DDR3 Memory

Brand: Sun
Capacity: 4GB
Memory Speed: 1600MHz
Data Integrity Check: Non-ECC
Voltage: 1.5v
Rank: 1Rx8
Latency Timing: CL11
Pins: 240 Pin
Memory Technology: DDR3
Buffered/Registered: Non
Memory Form Factor: UDIMM

Samsung M471B5273EH0-CK0 4GB 1600MHz 1Rx8 Non-ECC DDR3 Memory

Brand: Sun
Capacity: 4GB
Memory Speed: 1600MHz
Data Integrity Check: Non-ECC
Voltage: 1.35v
Rank: 1Rx8
Latency Timing: CL11
Pins: 204 Pin
Memory Technology: DDR3
Buffered/Registered: Non
Memory Form Factor: SODIMM

Samsung M471B5674EB0 2GB 1600MHz 204 Pin Non-ECC DDR3 Memory

Brand: Sun
Capacity: 2GB
Memory Speed: 1600MHz
Data Integrity Check: Non-ECC
Voltage: 1.35v
Latency Timing: CL11
Pins: 204 Pin
Memory Technology: DDR3
Buffered/Registered: Non
Memory Form Factor: SODIMM

Samsung M386B8G70DE0-YK0 64GB 1600MHz 8Rx4 240 Pin ECC DDR3 Memory

Brand: Sun
Capacity: 64GB
Memory Speed: 1600MHz
Data Integrity Check: ECC
Voltage: 1.35v
Rank: 8Rx4
Latency Timing: CL11
Pins: 240 Pin
Memory Technology: DDR3
Memory Form Factor: LRDIMM

Samsung M378B5173EH0-CK0 4GB 1600MHz 1Rx8 240 Pin Non-ECC DDR3 Memory

Brand: Sun
Capacity: 4GB
Memory Speed: 1600MHz
Data Integrity Check: Non-ECC
Voltage: 1.5v
Rank: 1Rx8
Latency Timing: CL11
Pins: 240 Pin
Memory Technology: DDR3
Buffered/Registered: Non
Memory Form Factor: UDIMM