Samsung M393A4K40CB2-CTD 32GB 1x32GB 2Rx4 DDR4-2666 CAS-19 ECC Image

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Samsung M393A4K40CB2-CTD 32GB 1x32GB 2Rx4 DDR4-2666 CAS-19 ECC

  • Part Number : M393A4K40CB2-CTD
  • Brand : Samsung

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Samsung M393A4K40CB2-CTD Manufacturer
Samsung M393A4K40CB2-CTD Form Factor
Form Factor
Samsung M393A4K40CB2-CTD Capacity
Samsung M393A4K40CB2-CTD Memory Speed
Memory Speed
2666 MHz
Samsung M393A4K40CB2-CTD Pins
288 Pin
Samsung M393A4K40CB2-CTD Interface

Full Samsung M393A4K40CB2-CTD Specifications

Brand Samsung
Form Factor RDIMM
Capacity 32GB
Memory Speed 2666 MHz
Data Integrity Check ECC
Voltage 1.2v
Rank 2Rx4
Latency Timing CL19
Pins 288 Pin
Memory Technology DDR4
Interface Type IDE

Samsung M393A4K40CB2-CTD Frequently Asked Questions

What does it mean if memory is ECC?

ECC, which stands for Error-Correcting Code, refers to a type of memory module that incorporates advanced error-checking and error-correction capabilities. ECC memory goes beyond standard non-ECC memory by providing additional measures to ensure data integrity.

The primary purpose of ECC memory is to detect and correct certain types of data errors that may occur during the operation of a computer system. It achieves this by adding extra bits, known as parity or checksum bits, to each memory word stored in the module.

These extra bits enable the ECC mechanism to identify and automatically correct single-bit errors. If a single bit is flipped or corrupted, the ECC memory can detect the error and rectify it, preventing potential data corruption and maintaining accurate information storage.

ECC memory is particularly prevalent in critical computing systems, such as servers and workstations, as well as in environments where data integrity is paramount, such as scientific or financial applications. By providing an additional layer of error detection and correction, ECC memory significantly reduces the risk of undetected errors that could lead to system crashes, data corruption, or inaccurate calculations.

It's important to note that the utilization of ECC memory requires support from both the motherboard and the memory controller in the system. Not all systems or consumer-grade motherboards offer compatibility with ECC memory, so it's crucial to verify the specifications and requirements before incorporating ECC memory modules into a specific system.

What does it mean if memory has a latency of CL19?

CL19 refers to the CAS Latency of a memory module. CAS (Column Address Strobe) Latency is a measure of the delay between the memory controller requesting data from the memory module and the data being available for use. It is often expressed as a number, such as CL19, CL16, etc. The lower the CAS Latency number, the faster the memory can respond to requests, resulting in better performance.

A CL19 memory module implies that it takes 19 clock cycles for the memory to provide the requested data after being accessed by the memory controller. Lower CAS Latency numbers (such as CL16 or CL14) indicate faster performance, as the memory can deliver data more quickly.

Memory modules with CL19 are relatively slower compared to those with lower CAS Latency values. CL19 memory is not necessarily a recent development; it has been around for a while as memory technology has evolved. The concept of CAS Latency and its various values have been present since DDR (Double Data Rate) SDRAM (Synchronous Dynamic Random-Access Memory) became popular.

The importance of advancements in memory technology, including lower CAS Latency values like CL19, lies in improving overall system performance. Lower CAS Latency means that the memory can respond more quickly to the requests of the CPU or other components, reducing wait times and enhancing the overall speed of data transfer. This is particularly significant in applications that require high-speed data processing, such as gaming, content creation, scientific simulations, and server operations.

Faster memory can lead to improved system responsiveness, faster application loading times, and more efficient multitasking. However, it's essential to note that while lower CAS Latency values are desirable, they are just one aspect of memory performance. Other factors like memory capacity, memory speed, and the specific needs of the system also play a role in determining the overall performance gain.

Advancements in memory technology, including improvements in CAS Latency, contribute to making computing systems more powerful and efficient, ultimately enhancing the user experience across a wide range of applications.

What does it mean if memory is RDIMM?

When memory is referred to as RDIMM, it means that it belongs to the category of Registered Dual In-Line Memory Modules. RDIMMs offer specific advantages and features compared to other memory module types.

RDIMMs incorporate a register or buffer component between the memory chips and the memory controller. This register helps to enhance signal integrity and reduce electrical load on the memory bus. By using the register, RDIMMs can support a larger number of memory modules on a single memory channel compared to unbuffered memory modules (UDIMMs).

The primary benefit of RDIMMs is their ability to support larger memory capacities, making them ideal for memory-intensive applications and server environments. The register within RDIMMs helps to control and stabilize signals, allowing for greater memory density and improved system performance.

However, it's important to note that RDIMMs may introduce a slight increase in memory latency due to the buffering process. This additional latency is often outweighed by the advantages of increased memory capacity and improved signal integrity, particularly in enterprise-level environments where stability and reliability are critical.

To utilize RDIMMs, it is necessary to ensure compatibility with the system's memory controller and motherboard, as they must specifically support registered memory technology. Consulting the system documentation or manufacturer's guidelines is recommended to verify compatibility.

Overall, RDIMMs provide a reliable and efficient solution for applications requiring high memory capacities, improved signal integrity, and robust performance. They are commonly used in server environments, virtualization platforms, and other memory-demanding scenarios.

What does it mean if memory has a speed of 2666MHz?

RAM speed is measured in megahertz (MHz) and refers to the number of cycles per second that the RAM can perform. In the context of "2666 MHz" RAM, it means that the RAM module is capable of performing 2,666 million cycles per second.

This measurement is often associated with DDR4 RAM, which is a type of Double Data Rate (DDR) RAM that was widely used in computers and servers. DDR4 RAM with a speed of 2666 MHz was released around 2014-2015. The release of DDR4 RAM marked an important advancement in technology for several reasons:

  1. Increased Data Transfer Rate: DDR4 RAM offered faster data transfer rates compared to its predecessor, DDR3. The higher MHz rating translated to improved performance in data-intensive tasks, as more data could be transferred between the RAM and the CPU in a shorter amount of time.

  2. Energy Efficiency: DDR4 RAM was designed to be more energy-efficient than DDR3. It operated at lower voltage levels, which helped reduce power consumption and heat generation. This was particularly important for laptops and servers where energy efficiency and heat management were crucial.

  3. Higher Capacity and Scalability: DDR4 RAM allowed for larger memory modules and higher capacities. This was important for applications that required a large amount of memory, such as virtualization, big data analysis, and content creation. Servers benefited from being able to accommodate more RAM for demanding workloads.

  4. Improved Bandwidth: The increased MHz rating of DDR4 RAM translated to improved memory bandwidth, which is the rate at which data can be read from or written to the RAM. This was important for tasks that involve rapid data manipulation, such as video editing and scientific simulations.

  5. Future-Proofing: DDR4 RAM's technological advancements provided a foundation for future upgrades and innovations in memory technology. This made DDR4-based systems more capable of handling evolving software and hardware demands.

Overall, the introduction of DDR4 RAM with higher speeds like 2666 MHz was important for improving overall system performance, energy efficiency, and the ability to handle more demanding tasks. As technology continued to advance, even faster RAM speeds and newer memory technologies have been developed, further pushing the boundaries of computing capabilities.


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