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|Memory Speed||400 MHz|
|Data Integrity Check||ECC|
When memory runs at 400MHz, it means that the memory module operates at a frequency of 400 million cycles per second. The unit "MHz" represents one million cycles per second. In practical terms, the memory can complete 400 million cycles within a single second.
Memory running at 400MHz is typically associated with older DDR (Double Data Rate) SDRAM technology. DDR memory, including the 400MHz variant, was released in 2000 by various memory manufacturers, including Samsung, Micron, and Infineon.
The release of 400MHz memory marked a significant advancement in memory technology at the time. DDR memory brought improvements over the previous SDRAM standard, including higher data transfer rates and increased bandwidth. DDR memory became widely adopted in computer systems, offering better performance compared to its predecessor.
It's important to note that memory technology has since evolved, with newer generations such as DDR2, DDR3, and DDR4 offering higher clock speeds and enhanced performance. However, 400MHz memory may still be found in older systems that are compatible with DDR memory or in specialized applications that do not require the higher speeds offered by newer memory technologies.
When evaluating memory capabilities, it's crucial to consider compatibility with the system's specifications and requirements. Additionally, factors such as memory type, timings, and the overall system configuration should be taken into account to accurately assess the memory's capabilities and performance.
ECC, which stands for Error-Correcting Code, refers to a type of memory module that incorporates advanced error-checking and error-correction capabilities. ECC memory goes beyond standard non-ECC memory by providing additional measures to ensure data integrity.
The primary purpose of ECC memory is to detect and correct certain types of data errors that may occur during the operation of a computer system. It achieves this by adding extra bits, known as parity or checksum bits, to each memory word stored in the module.
These extra bits enable the ECC mechanism to identify and automatically correct single-bit errors. If a single bit is flipped or corrupted, the ECC memory can detect the error and rectify it, preventing potential data corruption and maintaining accurate information storage.
ECC memory is particularly prevalent in critical computing systems, such as servers and workstations, as well as in environments where data integrity is paramount, such as scientific or financial applications. By providing an additional layer of error detection and correction, ECC memory significantly reduces the risk of undetected errors that could lead to system crashes, data corruption, or inaccurate calculations.
It's important to note that the utilization of ECC memory requires support from both the motherboard and the memory controller in the system. Not all systems or consumer-grade motherboards offer compatibility with ECC memory, so it's crucial to verify the specifications and requirements before incorporating ECC memory modules into a specific system.
A RAM module's voltage refers to the amount of electrical energy required for it to function properly. A voltage of 1.8V means that the RAM module operates at a supply voltage of 1.8 volts. This voltage specification is commonly associated with DDR2 (Double Data Rate 2) and DDR3 (Double Data Rate 3) memory technologies.
DDR2 memory with a voltage of 1.8V started to become popular around the mid-2000s, while DDR3 memory with the same voltage specification gained prominence later, around the late 2000s to early 2010s.
Importance as an Advancement:
The transition to memory modules operating at 1.8V was an important advancement in technology for a few reasons:
In summary, the adoption of 1.8V voltage RAM modules marked an important step in the evolution of memory technology, leading to improved energy efficiency, performance, and system design flexibility.
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