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Brand | Cisco |
Form Factor | RDIMM |
Capacity | 8GB |
Memory Speed | 2400 Mhz |
Data Integrity Check | ECC |
Voltage | 1.2v |
Rank | 1Rx4 |
Latency Timing | CL17 |
Pins | 288 Pin |
Memory Technology | DDR4 |
When memory is referred to as RDIMM, it means that it belongs to the category of Registered Dual In-Line Memory Modules. RDIMMs offer specific advantages and features compared to other memory module types.
RDIMMs incorporate a register or buffer component between the memory chips and the memory controller. This register helps to enhance signal integrity and reduce electrical load on the memory bus. By using the register, RDIMMs can support a larger number of memory modules on a single memory channel compared to unbuffered memory modules (UDIMMs).
The primary benefit of RDIMMs is their ability to support larger memory capacities, making them ideal for memory-intensive applications and server environments. The register within RDIMMs helps to control and stabilize signals, allowing for greater memory density and improved system performance.
However, it's important to note that RDIMMs may introduce a slight increase in memory latency due to the buffering process. This additional latency is often outweighed by the advantages of increased memory capacity and improved signal integrity, particularly in enterprise-level environments where stability and reliability are critical.
To utilize RDIMMs, it is necessary to ensure compatibility with the system's memory controller and motherboard, as they must specifically support registered memory technology. Consulting the system documentation or manufacturer's guidelines is recommended to verify compatibility.
Overall, RDIMMs provide a reliable and efficient solution for applications requiring high memory capacities, improved signal integrity, and robust performance. They are commonly used in server environments, virtualization platforms, and other memory-demanding scenarios.
In the context of server RAM (Random Access Memory), the term "2400 MHz" refers to the memory's clock speed, which indicates how quickly the memory module can transfer data. The clock speed is measured in megahertz (MHz) and represents the number of cycles the memory can complete in one second. In this case, 2400 MHz means that the memory module can perform 2.4 billion cycles per second.
Memory modules with higher clock speeds can transfer data more quickly, which can lead to improved performance in certain applications. However, it's important to note that memory speed is just one factor among many that contribute to overall system performance. Other factors, such as the memory's latency, capacity, and the efficiency of the memory controller on the CPU, also play a significant role in determining overall system performance.
The concept of memory with such clock speeds has been around for a while. The specific release date of memory modules operating at 2400 MHz depends on the generation and type of memory. Generally, DDR4 (Double Data Rate 4) memory, which is commonly used in servers and high-performance computers, started to appear with speeds up to and beyond 2400 MHz around 2014-2015. Prior to DDR4, there were DDR3, DDR2, and earlier generations of memory, each with their own corresponding clock speeds and technologies.
Higher memory speeds were important advancements in technology for several reasons:
It's worth noting that while higher memory speeds offer advantages, the performance gain isn't always linear, and other factors like memory capacity and latency also come into play. As technology continues to evolve, memory speeds are likely to increase even further, contributing to improved overall system performance.
ECC, which stands for Error-Correcting Code, refers to a type of memory module that incorporates advanced error-checking and error-correction capabilities. ECC memory goes beyond standard non-ECC memory by providing additional measures to ensure data integrity.
The primary purpose of ECC memory is to detect and correct certain types of data errors that may occur during the operation of a computer system. It achieves this by adding extra bits, known as parity or checksum bits, to each memory word stored in the module.
These extra bits enable the ECC mechanism to identify and automatically correct single-bit errors. If a single bit is flipped or corrupted, the ECC memory can detect the error and rectify it, preventing potential data corruption and maintaining accurate information storage.
ECC memory is particularly prevalent in critical computing systems, such as servers and workstations, as well as in environments where data integrity is paramount, such as scientific or financial applications. By providing an additional layer of error detection and correction, ECC memory significantly reduces the risk of undetected errors that could lead to system crashes, data corruption, or inaccurate calculations.
It's important to note that the utilization of ECC memory requires support from both the motherboard and the memory controller in the system. Not all systems or consumer-grade motherboards offer compatibility with ECC memory, so it's crucial to verify the specifications and requirements before incorporating ECC memory modules into a specific system.
If memory runs at 1.2V, it means that the memory module operates at a voltage of 1.2 volts. The voltage specification is an important factor in determining the power requirements and compatibility of the memory with the system.
Memory modules running at 1.2V are commonly associated with DDR4 (Double Data Rate 4) memory technology. DDR4 was introduced as the successor to DDR3 and brought significant improvements in performance, energy efficiency, and data transfer rates.
The release of 1.2V memory modules, specifically DDR4 modules, was driven by major memory manufacturers, including Samsung, Micron, SK Hynix, and others. These manufacturers recognized the need for higher memory capacities, increased speed, and improved power efficiency to meet the evolving demands of computing systems.
The shift to 1.2V voltage in DDR4 modules was motivated by the industry's focus on energy efficiency and power savings. By operating at a lower voltage, DDR4 memory modules offered reduced power consumption and heat generation compared to their predecessors.
The lower voltage of 1.2V in DDR4 modules was chosen as a balance between performance and power efficiency. It allowed for improved data transfer rates and higher memory densities while minimizing power requirements and contributing to energy-conscious computing.
DDR4 memory modules running at 1.2V voltage became the standard for mainstream computer systems, including desktops, laptops, servers, and other computing platforms. They provided higher performance, increased memory capacities, and improved power efficiency compared to previous memory technologies.
It's important to note that compatibility with the system's memory controller and motherboard is essential when using 1.2V memory modules. The system's hardware should be designed to support and operate at this voltage to ensure proper functionality.
DDR4 memory, operating at 1.2V, revolutionized the memory landscape by offering improved efficiency and performance for a wide range of computing applications. Its introduction brought significant advancements to memory technology, catering to the growing demands of modern computing systems for faster, more power-efficient memory solutions.
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