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|Data Integrity Check||ECC|
|Memory Technology||DDR4 SDRAM|
|Number of Modules||1x16GB|
ECC, which stands for Error-Correcting Code, refers to a type of memory module that incorporates advanced error-checking and error-correction capabilities. ECC memory goes beyond standard non-ECC memory by providing additional measures to ensure data integrity.
The primary purpose of ECC memory is to detect and correct certain types of data errors that may occur during the operation of a computer system. It achieves this by adding extra bits, known as parity or checksum bits, to each memory word stored in the module.
These extra bits enable the ECC mechanism to identify and automatically correct single-bit errors. If a single bit is flipped or corrupted, the ECC memory can detect the error and rectify it, preventing potential data corruption and maintaining accurate information storage.
ECC memory is particularly prevalent in critical computing systems, such as servers and workstations, as well as in environments where data integrity is paramount, such as scientific or financial applications. By providing an additional layer of error detection and correction, ECC memory significantly reduces the risk of undetected errors that could lead to system crashes, data corruption, or inaccurate calculations.
It's important to note that the utilization of ECC memory requires support from both the motherboard and the memory controller in the system. Not all systems or consumer-grade motherboards offer compatibility with ECC memory, so it's crucial to verify the specifications and requirements before incorporating ECC memory modules into a specific system.
In the context of server RAM (Random Access Memory), "CL15" refers to the CAS latency of the memory module. CAS latency (Column Address Strobe latency) is a measure of the time it takes for the memory module to respond to a read command. It is often represented as a number followed by "CL" (e.g., CL15).
CAS latency is one of the timings that defines the performance of a RAM module. Lower CAS latency values indicate faster responsiveness and better performance. CL15 signifies that it takes 15 clock cycles for the memory module to respond to a read command. In general, lower CAS latency is preferred because it results in faster data retrieval from memory.
Memory modules with lower CAS latency values, such as CL15, were released as part of advancements in DDR4 (Double Data Rate 4) RAM technology. DDR4 memory was introduced as the successor to DDR3, and it brought several improvements:
The introduction of memory modules with lower CAS latency, such as CL15, further contributed to the overall performance improvements brought about by DDR4 technology. Lower CAS latency helps reduce the delay in accessing data from memory, resulting in quicker response times for applications and improved overall system responsiveness.
If memory runs at 1.2V, it means that the memory module operates at a voltage of 1.2 volts. The voltage specification is an important factor in determining the power requirements and compatibility of the memory with the system.
Memory modules running at 1.2V are commonly associated with DDR4 (Double Data Rate 4) memory technology. DDR4 was introduced as the successor to DDR3 and brought significant improvements in performance, energy efficiency, and data transfer rates.
The release of 1.2V memory modules, specifically DDR4 modules, was driven by major memory manufacturers, including Samsung, Micron, SK Hynix, and others. These manufacturers recognized the need for higher memory capacities, increased speed, and improved power efficiency to meet the evolving demands of computing systems.
The shift to 1.2V voltage in DDR4 modules was motivated by the industry's focus on energy efficiency and power savings. By operating at a lower voltage, DDR4 memory modules offered reduced power consumption and heat generation compared to their predecessors.
The lower voltage of 1.2V in DDR4 modules was chosen as a balance between performance and power efficiency. It allowed for improved data transfer rates and higher memory densities while minimizing power requirements and contributing to energy-conscious computing.
DDR4 memory modules running at 1.2V voltage became the standard for mainstream computer systems, including desktops, laptops, servers, and other computing platforms. They provided higher performance, increased memory capacities, and improved power efficiency compared to previous memory technologies.
It's important to note that compatibility with the system's memory controller and motherboard is essential when using 1.2V memory modules. The system's hardware should be designed to support and operate at this voltage to ensure proper functionality.
DDR4 memory, operating at 1.2V, revolutionized the memory landscape by offering improved efficiency and performance for a wide range of computing applications. Its introduction brought significant advancements to memory technology, catering to the growing demands of modern computing systems for faster, more power-efficient memory solutions.
When referring to server RAM, the term "2Rx4" pertains to a specific configuration and organization of memory modules. Let's delve into the meaning of each element:
The advent of the 2Rx4 memory configuration took place around the early 2000s and marked a significant technological advancement. It introduced increased memory capacity and enhanced performance in server environments. Prior to this configuration, memory modules typically possessed a single rank (1R) and were organized with an x8 (8-bit) or x16 (16-bit) data width.
The introduction of 2Rx4 modules held importance as it offered improved memory density through multiple ranks and a 4-bit data width. Consequently, memory capacity on a single module was expanded, and memory bandwidth was enhanced—an essential factor for demanding server applications. By employing 2Rx4 memory modules, servers could effectively handle larger datasets and execute tasks more efficiently, resulting in overall system performance improvements.
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